IXYS - IXTH20N65X

KEY Part #: K6398409

IXTH20N65X Pricing (USD) [13264pcs Stock]

  • 1 pcs$3.41983
  • 10 pcs$3.07609
  • 100 pcs$2.52905
  • 500 pcs$2.11893
  • 1,000 pcs$1.84552

Part Number:
IXTH20N65X
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 650V 20A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in IXYS IXTH20N65X electronic components. IXTH20N65X can be shipped within 24 hours after order. If you have any demands for IXTH20N65X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH20N65X Product Attributes

Part Number : IXTH20N65X
Manufacturer : IXYS
Description : MOSFET N-CH 650V 20A TO-247
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 210 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1390pF @ 25V
FET Feature : -
Power Dissipation (Max) : 320W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXTH)
Package / Case : TO-247-3

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