Infineon Technologies - IPP12CN10N G

KEY Part #: K6409811

[153pcs Stock]


    Part Number:
    IPP12CN10N G
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 100V 67A TO-220.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - Programmable Unijunction, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in Infineon Technologies IPP12CN10N G electronic components. IPP12CN10N G can be shipped within 24 hours after order. If you have any demands for IPP12CN10N G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP12CN10N G Product Attributes

    Part Number : IPP12CN10N G
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 100V 67A TO-220
    Series : OptiMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 67A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 12.9 mOhm @ 67A, 10V
    Vgs(th) (Max) @ Id : 4V @ 83µA
    Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 4320pF @ 50V
    FET Feature : -
    Power Dissipation (Max) : 125W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : PG-TO220-3
    Package / Case : TO-220-3

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