Infineon Technologies - IPD70P04P4L08ATMA1

KEY Part #: K6420301

IPD70P04P4L08ATMA1 Pricing (USD) [179509pcs Stock]

  • 1 pcs$0.20605
  • 2,500 pcs$0.18906

Part Number:
IPD70P04P4L08ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET P-CH TO252-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD70P04P4L08ATMA1 Product Attributes

Part Number : IPD70P04P4L08ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET P-CH TO252-3
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7.8 mOhm @ 70A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs : 92nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 5430pF @ 25V
FET Feature : -
Power Dissipation (Max) : 75W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO252-3-313
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63