Infineon Technologies - IRLB3813PBF

KEY Part #: K6417068

IRLB3813PBF Pricing (USD) [46760pcs Stock]

  • 1 pcs$0.75676
  • 10 pcs$0.68443
  • 100 pcs$0.55009
  • 500 pcs$0.42786
  • 1,000 pcs$0.33534

Part Number:
IRLB3813PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 30V 260A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Power Driver Modules, Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IRLB3813PBF electronic components. IRLB3813PBF can be shipped within 24 hours after order. If you have any demands for IRLB3813PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLB3813PBF Product Attributes

Part Number : IRLB3813PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 260A TO-220AB
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.95 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id : 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 86nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8420pF @ 15V
FET Feature : -
Power Dissipation (Max) : 230W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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