IRFUC20PBF Pricing (USD) [55666pcs Stock]
- 1 pcs$0.61461
- 10 pcs$0.54604
- 100 pcs$0.43156
- 500 pcs$0.31659
- 1,000 pcs$0.24994
- Part Number:
- IRFUC20PBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 600V 2A I-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFUC20PBF electronic components. IRFUC20PBF can be shipped within 24 hours after order. If you have any demands for IRFUC20PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFUC20PBF Product Attributes
Part Number :
IRFUC20PBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 2A I-PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.4 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 42W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-251AA
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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