VS-GT100TP60N Pricing (USD) [427pcs Stock]
- 1 pcs$108.51287
- 24 pcs$89.00937
- Part Number:
- VS-GT100TP60N
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- IGBT 600V 160A 417W INT-A-PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - Programmable Unijunction, Diodes - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division VS-GT100TP60N electronic components. VS-GT100TP60N can be shipped within 24 hours after order. If you have any demands for VS-GT100TP60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GT100TP60N Product Attributes
Part Number :
VS-GT100TP60N
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT 600V 160A 417W INT-A-PAK
Series :
-
Part Status :
Active
IGBT Type :
Trench
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
600V
Current - Collector (Ic) (Max) :
160A
Power - Max :
417W
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 100A
Current - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
7.71nF @ 30V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
175°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
INT-A-PAK (3 + 4)
Supplier Device Package :
INT-A-PAK
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