Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT WARP 600V 114A MTP
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
600V
Current - Collector (Ic) (Max) :
114A
Vce(on) (Max) @ Vge, Ic :
3.2V @ 15V, 100A
Current - Collector Cutoff (Max) :
400µA
Input Capacitance (Cies) @ Vce :
7.1nF @ 30V
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
12-MTP Module
Supplier Device Package :
12-MTP