Toshiba Semiconductor and Storage - TK13A60D(STA4,Q,M)

KEY Part #: K6402701

TK13A60D(STA4,Q,M) Pricing (USD) [31595pcs Stock]

  • 1 pcs$1.43668
  • 10 pcs$1.28244
  • 100 pcs$0.99750
  • 500 pcs$0.80773
  • 1,000 pcs$0.68122

Part Number:
TK13A60D(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 600V 13A TO220SIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Thyristors - TRIACs, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - JFETs, Diodes - Bridge Rectifiers and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M) electronic components. TK13A60D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK13A60D(STA4,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK13A60D(STA4,Q,M) Product Attributes

Part Number : TK13A60D(STA4,Q,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 13A TO220SIS
Series : π-MOSVII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 430 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack

You May Also Be Interested In
  • BS170PSTOB

    Diodes Incorporated

    MOSFET N-CH 60V 0.27A TO92-3.

  • DN2540N3-G

    Microchip Technology

    MOSFET N-CH 400V 0.12A TO92-3.

  • GP1M016A025CG

    Global Power Technologies Group

    MOSFET N-CH 250V 16A DPAK.

  • GP1M008A050CG

    Global Power Technologies Group

    MOSFET N-CH 500V 8A DPAK.

  • GP1M007A065CG

    Global Power Technologies Group

    MOSFET N-CH 650V 6.5A DPAK.

  • GP1M003A090C

    Global Power Technologies Group

    MOSFET N-CH 900V 2.5A DPAK.