Vishay Siliconix - IRF9Z10

KEY Part #: K6393526

IRF9Z10 Pricing (USD) [54709pcs Stock]

  • 1 pcs$0.71827
  • 1,000 pcs$0.71470

Part Number:
IRF9Z10
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 60V 6.7A TO220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Power Driver Modules, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Siliconix IRF9Z10 electronic components. IRF9Z10 can be shipped within 24 hours after order. If you have any demands for IRF9Z10, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF9Z10 Product Attributes

Part Number : IRF9Z10
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 60V 6.7A TO220AB
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 500 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 270pF @ 25V
FET Feature : -
Power Dissipation (Max) : 43W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3