[778pcs Stock]
- Part Number:
- VS-GT400TH120N
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- IGBT 1200V 600A 2119W DIAP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division VS-GT400TH120N electronic components. VS-GT400TH120N can be shipped within 24 hours after order. If you have any demands for VS-GT400TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GT400TH120N Product Attributes
Part Number :
VS-GT400TH120N
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT 1200V 600A 2119W DIAP
Series :
-
Part Status :
Obsolete
IGBT Type :
Trench
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
600A
Power - Max :
2119W
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 400A
Current - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
28.8nF @ 25V
Input :
Standard
NTC Thermistor :
No
Operating Temperature :
150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
Double INT-A-PAK (3 + 8)
Supplier Device Package :
Double INT-A-PAK
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