Infineon Technologies - IPA65R065C7XKSA1

KEY Part #: K6416735

IPA65R065C7XKSA1 Pricing (USD) [17816pcs Stock]

  • 1 pcs$2.45326
  • 500 pcs$2.44105

Part Number:
IPA65R065C7XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V TO220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules and Diodes - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IPA65R065C7XKSA1 electronic components. IPA65R065C7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA65R065C7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA65R065C7XKSA1 Product Attributes

Part Number : IPA65R065C7XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V TO220-3
Series : CoolMOS™ C7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id : 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs : 64nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3020pF @ 400V
FET Feature : -
Power Dissipation (Max) : 34W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-FP
Package / Case : TO-220-3 Full Pack

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