IXFT4N100Q Pricing (USD) [15205pcs Stock]
- 1 pcs$3.13251
- 30 pcs$3.11693
- Part Number:
- IXFT4N100Q
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 4A TO-268.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Diodes - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in IXYS IXFT4N100Q electronic components. IXFT4N100Q can be shipped within 24 hours after order. If you have any demands for IXFT4N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT4N100Q Product Attributes
Part Number :
IXFT4N100Q
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 4A TO-268
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-268
Package / Case :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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