Infineon Technologies - IRFS3207PBF

KEY Part #: K6408057

IRFS3207PBF Pricing (USD) [759pcs Stock]

  • 1 pcs$1.49838
  • 10 pcs$1.33797
  • 100 pcs$1.04086
  • 500 pcs$0.84285
  • 1,000 pcs$0.71084

Part Number:
IRFS3207PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 75V 170A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Infineon Technologies IRFS3207PBF electronic components. IRFS3207PBF can be shipped within 24 hours after order. If you have any demands for IRFS3207PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS3207PBF Product Attributes

Part Number : IRFS3207PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 75V 170A D2PAK
Series : HEXFET®
Part Status : Discontinued at Digi-Key
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 50V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB