IRFH8307TRPBF Pricing (USD) [106505pcs Stock]
- 1 pcs$0.34728
- 4,000 pcs$0.33336
- Part Number:
- IRFH8307TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 100A PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH8307TRPBF electronic components. IRFH8307TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8307TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8307TRPBF Product Attributes
Part Number :
IRFH8307TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 100A PQFN
Series :
HEXFET®, StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
42A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7200pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
3.6W (Ta), 156W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerTDFN
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