Taiwan Semiconductor Corporation - ES3DVHM6G

KEY Part #: K6434616

ES3DVHM6G Pricing (USD) [761822pcs Stock]

  • 1 pcs$0.04855

Part Number:
ES3DVHM6G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
DIODE GEN PURP 200V 3A DO214AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation ES3DVHM6G electronic components. ES3DVHM6G can be shipped within 24 hours after order. If you have any demands for ES3DVHM6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3DVHM6G Product Attributes

Part Number : ES3DVHM6G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 200V 3A DO214AB
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 3A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 20ns
Current - Reverse Leakage @ Vr : 10µA @ 200V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AB, SMC
Supplier Device Package : DO-214AB (SMC)
Operating Temperature - Junction : -55°C ~ 150°C

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