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GeneSiC Semiconductor - MURTA400120

KEY Part #: K6468865

MURTA400120 Pricing (USD) [768pcs Stock]

  • 1 pcs$60.52443
  • 18 pcs$36.55488
Part Number:
MURTA400120
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE GEN 1.2KV 200A 3 TOWER. Rectifiers 1200V 400A Si Super Fast Recovery
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor MURTA400120 electronic components. MURTA400120 can be shipped within 24 hours after order. If you have any demands for MURTA400120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURTA400120 Product Attributes

Part Number : MURTA400120
Manufacturer : GeneSiC Semiconductor
Description : DIODE GEN 1.2KV 200A 3 TOWER
Series : -
Part Status : Active
Diode Configuration : 1 Pair Common Cathode
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : 200A
Voltage - Forward (Vf) (Max) @ If : 2.6V @ 200A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 25µA @ 1200V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Chassis Mount
Package / Case : Three Tower
Supplier Device Package : Three Tower
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