STW12NK80Z Pricing (USD) [18087pcs Stock]
- 1 pcs$2.27842
- 10 pcs$2.03603
- 100 pcs$1.66955
- 500 pcs$1.35193
- 1,000 pcs$1.08171
- Part Number:
- STW12NK80Z
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 800V 10.5A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in STMicroelectronics STW12NK80Z electronic components. STW12NK80Z can be shipped within 24 hours after order. If you have any demands for STW12NK80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW12NK80Z Product Attributes
Part Number :
STW12NK80Z
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 800V 10.5A TO-247
Series :
SuperMESH™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 5.25A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2620pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
190W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3
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