Vishay Siliconix - SQ4917EY-T1_GE3

KEY Part #: K6525152

SQ4917EY-T1_GE3 Pricing (USD) [98339pcs Stock]

  • 1 pcs$0.39761
  • 2,500 pcs$0.31715

Part Number:
SQ4917EY-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2 P-CHANNEL 60V 8A 8SO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Special Purpose, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Thyristors - SCRs and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SQ4917EY-T1_GE3 electronic components. SQ4917EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4917EY-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQ4917EY-T1_GE3 Product Attributes

Part Number : SQ4917EY-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2 P-CHANNEL 60V 8A 8SO
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Rds On (Max) @ Id, Vgs : 48 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1910pF @ 30V
Power - Max : 5W (Tc)
Operating Temperature : -55°C ~ 175°C (TA)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO