[8561pcs Stock]
- Part Number:
- NTMSD3P102R2SG
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 20V 2.34A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors) and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTMSD3P102R2SG electronic components. NTMSD3P102R2SG can be shipped within 24 hours after order. If you have any demands for NTMSD3P102R2SG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTMSD3P102R2SG Product Attributes
Part Number :
NTMSD3P102R2SG
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 20V 2.34A 8-SOIC
Series :
FETKY™
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
85 mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 16V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
730mW (Ta)
Operating Temperature :
-
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOIC
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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