TK20G60W,RVQ Pricing (USD) [76236pcs Stock]
- 1 pcs$0.56699
- 1,000 pcs$0.56417
- Part Number:
- TK20G60W,RVQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N CH 600V 20A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK20G60W,RVQ electronic components. TK20G60W,RVQ can be shipped within 24 hours after order. If you have any demands for TK20G60W,RVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK20G60W,RVQ Product Attributes
Part Number :
TK20G60W,RVQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 600V 20A D2PAK
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
155 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1680pF @ 300V
FET Feature :
Super Junction
Power Dissipation (Max) :
165W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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