Vishay Semiconductor Diodes Division - VS-2EFU06-M3/I

KEY Part #: K6436163

VS-2EFU06-M3/I Pricing (USD) [107745pcs Stock]

  • 1 pcs$0.34329
  • 10,000 pcs$0.29485

Part Number:
VS-2EFU06-M3/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 2A DO219AB. Rectifiers If(AV) 2A Vr 600V Fred Pt
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - JFETs, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-2EFU06-M3/I electronic components. VS-2EFU06-M3/I can be shipped within 24 hours after order. If you have any demands for VS-2EFU06-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EFU06-M3/I Product Attributes

Part Number : VS-2EFU06-M3/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 2A DO219AB
Series : FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 1.35V @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 55ns
Current - Reverse Leakage @ Vr : 3µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-219AB
Supplier Device Package : DO-219AB (SMF)
Operating Temperature - Junction : -55°C ~ 100°C

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