IRLS640A Pricing (USD) [48708pcs Stock]
- 1 pcs$0.78185
- 10 pcs$0.70575
- 100 pcs$0.56715
- 500 pcs$0.44114
- 1,000 pcs$0.34575
- Part Number:
- IRLS640A
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 200V 9.8A TO-220F.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Thyristors - DIACs, SIDACs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in ON Semiconductor IRLS640A electronic components. IRLS640A can be shipped within 24 hours after order. If you have any demands for IRLS640A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLS640A Product Attributes
Part Number :
IRLS640A
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 200V 9.8A TO-220F
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 4.9A, 5V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1705pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
40W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220F
Package / Case :
TO-220-3 Full Pack
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