Vishay Semiconductor Diodes Division - NS8JT-E3/45

KEY Part #: K6437547

NS8JT-E3/45 Pricing (USD) [209448pcs Stock]

  • 1 pcs$0.17659
  • 1,000 pcs$0.16077

Part Number:
NS8JT-E3/45
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 8A TO220AC. Rectifiers 600 Volt 8.0 Amp 125 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division NS8JT-E3/45 electronic components. NS8JT-E3/45 can be shipped within 24 hours after order. If you have any demands for NS8JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NS8JT-E3/45 Product Attributes

Part Number : NS8JT-E3/45
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 8A TO220AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 8A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220AC
Operating Temperature - Junction : -55°C ~ 150°C

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