Infineon Technologies - BSC100N03LSGATMA1

KEY Part #: K6413234

[13170pcs Stock]


    Part Number:
    BSC100N03LSGATMA1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 30V 44A TDSON-8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Thyristors - TRIACs, Transistors - IGBTs - Single, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single ...
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    We specialize in Infineon Technologies BSC100N03LSGATMA1 electronic components. BSC100N03LSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC100N03LSGATMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSC100N03LSGATMA1 Product Attributes

    Part Number : BSC100N03LSGATMA1
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 30V 44A TDSON-8
    Series : OptiMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 13A (Ta), 44A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 10 mOhm @ 30A, 10V
    Vgs(th) (Max) @ Id : 2.2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 15V
    FET Feature : -
    Power Dissipation (Max) : 2.5W (Ta), 30W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PG-TDSON-8
    Package / Case : 8-PowerTDFN