FDD10N20LZTM Pricing (USD) [257272pcs Stock]
- 1 pcs$0.14377
- 2,500 pcs$0.13058
- Part Number:
- FDD10N20LZTM
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 200V 7.6A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Diodes - Zener - Single, Power Driver Modules, Thyristors - TRIACs, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDD10N20LZTM electronic components. FDD10N20LZTM can be shipped within 24 hours after order. If you have any demands for FDD10N20LZTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD10N20LZTM Product Attributes
Part Number :
FDD10N20LZTM
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 200V 7.6A DPAK-3
Series :
UniFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
83W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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