FCMT199N60 Pricing (USD) [49718pcs Stock]
- 1 pcs$0.78644
- 3,000 pcs$0.62557
- Part Number:
- FCMT199N60
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 20.2A POWER88.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCMT199N60 electronic components. FCMT199N60 can be shipped within 24 hours after order. If you have any demands for FCMT199N60, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCMT199N60 Product Attributes
Part Number :
FCMT199N60
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 20.2A POWER88
Series :
SuperFET® II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
199 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2950pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
208W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Power88
Package / Case :
4-PowerTSFN
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