Diodes Incorporated - DMTH6016LSDQ-13

KEY Part #: K6522184

DMTH6016LSDQ-13 Pricing (USD) [165377pcs Stock]

  • 1 pcs$0.22366
  • 2,500 pcs$0.19795

Part Number:
DMTH6016LSDQ-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2 N-CHANNEL 60V 7.6A 8SO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Diodes Incorporated DMTH6016LSDQ-13 electronic components. DMTH6016LSDQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH6016LSDQ-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH6016LSDQ-13 Product Attributes

Part Number : DMTH6016LSDQ-13
Manufacturer : Diodes Incorporated
Description : MOSFET 2 N-CHANNEL 60V 7.6A 8SO
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 7.6A (Ta)
Rds On (Max) @ Id, Vgs : 19.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 864pF @ 30V
Power - Max : 1.4W, 1.9W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO