Global Power Technologies Group - GSID200A120S5C1

KEY Part #: K6532474

GSID200A120S5C1 Pricing (USD) [494pcs Stock]

  • 1 pcs$93.86639
  • 10 pcs$89.33491
  • 25 pcs$86.31392

Part Number:
GSID200A120S5C1
Manufacturer:
Global Power Technologies Group
Detailed description:
IGBT MODULE 1200V 335A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Global Power Technologies Group GSID200A120S5C1 electronic components. GSID200A120S5C1 can be shipped within 24 hours after order. If you have any demands for GSID200A120S5C1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GSID200A120S5C1 Product Attributes

Part Number : GSID200A120S5C1
Manufacturer : Global Power Technologies Group
Description : IGBT MODULE 1200V 335A
Series : -
Part Status : Active
IGBT Type : -
Configuration : Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 335A
Power - Max : -
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 200A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 22.4nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : Module

You May Also Be Interested In
  • GA100SICP12-227

    GeneSiC Semiconductor

    SIC CO-PACK SJT/RECT 100A 1.2KV.

  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.

  • A1P35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK1.