IXFN360N10T Pricing (USD) [4454pcs Stock]
- 1 pcs$10.21113
- 10 pcs$9.28175
- 25 pcs$8.58569
- 100 pcs$7.50464
- 250 pcs$6.84247
- 500 pcs$6.40102
- Part Number:
- IXFN360N10T
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 100V 360A SOT-227B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - RF, Thyristors - SCRs - Modules, Thyristors - SCRs, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXFN360N10T electronic components. IXFN360N10T can be shipped within 24 hours after order. If you have any demands for IXFN360N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN360N10T Product Attributes
Part Number :
IXFN360N10T
Manufacturer :
IXYS
Description :
MOSFET N-CH 100V 360A SOT-227B
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
360A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.6 mOhm @ 180A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
505nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
36000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
830W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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