SIJ462DP-T1-GE3 Pricing (USD) [132001pcs Stock]
- 1 pcs$0.28020
- 6,000 pcs$0.24996
- Part Number:
- SIJ462DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 60V 46.5A PPAK SO-8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIJ462DP-T1-GE3 electronic components. SIJ462DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIJ462DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIJ462DP-T1-GE3 Product Attributes
Part Number :
SIJ462DP-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 60V 46.5A PPAK SO-8
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
46.5A(Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® SO-8
Package / Case :
PowerPAK® SO-8
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