Panasonic Electronic Components - EXB-24AT6AR5X

KEY Part #: K7359535

EXB-24AT6AR5X Pricing (USD) [1824451pcs Stock]

  • 1 pcs$0.02480
  • 10,000 pcs$0.02468
  • 30,000 pcs$0.02314
  • 50,000 pcs$0.02051
  • 100,000 pcs$0.02005

Part Number:
EXB-24AT6AR5X
Manufacturer:
Panasonic Electronic Components
Detailed description:
RF ATTENUATOR 6DB 50OHM 0404.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Balun, RFID, RF Access, Monitoring ICs, RFID Evaluation and Development Kits, Boards, RFID Accessories, RFID Antennas, RF Receiver, Transmitter, and Transceiver Finished Units, RF Front End (LNA + PA) and RFI and EMI - Contacts, Fingerstock and Gaskets ...
Competitive Advantage:
We specialize in Panasonic Electronic Components EXB-24AT6AR5X electronic components. EXB-24AT6AR5X can be shipped within 24 hours after order. If you have any demands for EXB-24AT6AR5X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EXB-24AT6AR5X Product Attributes

Part Number : EXB-24AT6AR5X
Manufacturer : Panasonic Electronic Components
Description : RF ATTENUATOR 6DB 50OHM 0404
Series : -
Part Status : Active
Attenuation Value : 6dB
Frequency Range : 0Hz ~ 3GHz
Power (Watts) : 40mW
Impedance : 50 Ohms
Package / Case : 0404 (1010 Metric), Concave

You May Also Be Interested In
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.