Vishay Semiconductor Diodes Division - BYM12-100HE3_A/I

KEY Part #: K6439325

BYM12-100HE3_A/I Pricing (USD) [777077pcs Stock]

  • 1 pcs$0.04760

Part Number:
BYM12-100HE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 1A DO213AB. Rectifiers 1A,100V,50NS GL41 AEC-Q101 Qualified
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - JFETs and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYM12-100HE3_A/I electronic components. BYM12-100HE3_A/I can be shipped within 24 hours after order. If you have any demands for BYM12-100HE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYM12-100HE3_A/I Product Attributes

Part Number : BYM12-100HE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 1A DO213AB
Series : Automotive, AEC-Q101, Superectifier®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 20pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-213AB, MELF (Glass)
Supplier Device Package : DO-213AB
Operating Temperature - Junction : -65°C ~ 175°C

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