STFW42N60M2-EP Pricing (USD) [13950pcs Stock]
- 1 pcs$4.34530
- 10 pcs$3.91033
- 100 pcs$3.21513
- 500 pcs$2.69374
- Part Number:
- STFW42N60M2-EP
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 34A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Diodes - Zener - Arrays and Diodes - RF ...
- Competitive Advantage:
- We specialize in STMicroelectronics STFW42N60M2-EP electronic components. STFW42N60M2-EP can be shipped within 24 hours after order. If you have any demands for STFW42N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STFW42N60M2-EP Product Attributes
Part Number :
STFW42N60M2-EP
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 34A
Series :
MDmesh™ M2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
87 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2370pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
63W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ISOWATT-218FX
Package / Case :
ISOWATT218FX
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