Vishay Siliconix - SI7913DN-T1-GE3

KEY Part #: K6522080

SI7913DN-T1-GE3 Pricing (USD) [111328pcs Stock]

  • 1 pcs$0.33224
  • 3,000 pcs$0.31128

Part Number:
SI7913DN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2P-CH 20V 5A PPAK 1212-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Programmable Unijunction, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7913DN-T1-GE3 electronic components. SI7913DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7913DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7913DN-T1-GE3 Product Attributes

Part Number : SI7913DN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2P-CH 20V 5A PPAK 1212-8
Series : TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 5A
Rds On (Max) @ Id, Vgs : 37 mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1.3W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® 1212-8 Dual
Supplier Device Package : PowerPAK® 1212-8 Dual