HN1C01F-GR(TE85L,F Pricing (USD) [228100pcs Stock]
- 1 pcs$0.16215
- 10 pcs$0.11549
- 25 pcs$0.08986
- Part Number:
- HN1C01F-GR(TE85L,F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS 2NPN 50V 0.15A SM6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage HN1C01F-GR(TE85L,F electronic components. HN1C01F-GR(TE85L,F can be shipped within 24 hours after order. If you have any demands for HN1C01F-GR(TE85L,F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1C01F-GR(TE85L,F Product Attributes
Part Number :
HN1C01F-GR(TE85L,F
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN 50V 0.15A SM6
Series :
-
Part Status :
Discontinued at Digi-Key
Transistor Type :
2 NPN (Dual)
Current - Collector (Ic) (Max) :
150mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA, 6V
Power - Max :
300mW
Frequency - Transition :
800MHz
Operating Temperature :
125°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SC-74, SOT-457
Supplier Device Package :
SM6
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