Vishay Semiconductor Diodes Division - 1N4003GP-E3/73

KEY Part #: K6458268

1N4003GP-E3/73 Pricing (USD) [1023770pcs Stock]

  • 1 pcs$0.03613
  • 9,000 pcs$0.03177

Part Number:
1N4003GP-E3/73
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 1A DO204AL. Rectifiers Vr/200V Io/1A Glass Passivated
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division 1N4003GP-E3/73 electronic components. 1N4003GP-E3/73 can be shipped within 24 hours after order. If you have any demands for 1N4003GP-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4003GP-E3/73 Product Attributes

Part Number : 1N4003GP-E3/73
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 1A DO204AL
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Current - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AL, DO-41, Axial
Supplier Device Package : DO-204AL (DO-41)
Operating Temperature - Junction : -65°C ~ 175°C

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