Vishay Semiconductor Diodes Division - EGF1T-E3/67A

KEY Part #: K6457365

EGF1T-E3/67A Pricing (USD) [462678pcs Stock]

  • 1 pcs$0.08436
  • 1,500 pcs$0.08394
  • 3,000 pcs$0.07653
  • 7,500 pcs$0.07160
  • 10,500 pcs$0.06666

Part Number:
EGF1T-E3/67A
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1.3KV 1A DO214BA. Rectifiers 1.0 Amp 1300 Volt
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division EGF1T-E3/67A electronic components. EGF1T-E3/67A can be shipped within 24 hours after order. If you have any demands for EGF1T-E3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGF1T-E3/67A Product Attributes

Part Number : EGF1T-E3/67A
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1.3KV 1A DO214BA
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1300V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 3V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 5µA @ 1300V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214BA
Supplier Device Package : DO-214BA (GF1)
Operating Temperature - Junction : -55°C ~ 150°C

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