[1011pcs Stock]
- Part Number:
- TPC8035-H(TE12L,QM
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 30V 18A SOP8 2-6J1B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPC8035-H(TE12L,QM electronic components. TPC8035-H(TE12L,QM can be shipped within 24 hours after order. If you have any demands for TPC8035-H(TE12L,QM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8035-H(TE12L,QM Product Attributes
Part Number :
TPC8035-H(TE12L,QM
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 30V 18A SOP8 2-6J1B
Series :
U-MOSVI-H
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.2 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7800pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP (5.5x6.0)
Package / Case :
8-SOIC (0.173", 4.40mm Width)
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