STU9N60M2 Pricing (USD) [119071pcs Stock]
- 1 pcs$0.31063
- 3,000 pcs$0.27652
- Part Number:
- STU9N60M2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 5.5A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - Single, Diodes - Bridge Rectifiers and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in STMicroelectronics STU9N60M2 electronic components. STU9N60M2 can be shipped within 24 hours after order. If you have any demands for STU9N60M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STU9N60M2 Product Attributes
Part Number :
STU9N60M2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 5.5A IPAK
Series :
MDmesh™ II Plus
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
780 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
320pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
60W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
IPAK (TO-251)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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