ON Semiconductor - FDMA6676PZ

KEY Part #: K6418665

FDMA6676PZ Pricing (USD) [274762pcs Stock]

  • 1 pcs$0.13529
  • 3,000 pcs$0.13462

Part Number:
FDMA6676PZ
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 30V 11A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistors - IGBTs - Arrays and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in ON Semiconductor FDMA6676PZ electronic components. FDMA6676PZ can be shipped within 24 hours after order. If you have any demands for FDMA6676PZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMA6676PZ Product Attributes

Part Number : FDMA6676PZ
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 30V 11A
Series : PowerTrench®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 2160pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.4W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-MicroFET (2x2)
Package / Case : 6-PowerWDFN

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