Infineon Technologies - SISC050N10DX1SA1

KEY Part #: K6421037

SISC050N10DX1SA1 Pricing (USD) [332673pcs Stock]

  • 1 pcs$0.11118

Part Number:
SISC050N10DX1SA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CHAN SAWED WAFER.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - RF and Power Driver Modules ...
Competitive Advantage:
We specialize in Infineon Technologies SISC050N10DX1SA1 electronic components. SISC050N10DX1SA1 can be shipped within 24 hours after order. If you have any demands for SISC050N10DX1SA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISC050N10DX1SA1 Product Attributes

Part Number : SISC050N10DX1SA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CHAN SAWED WAFER
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : -
Current - Continuous Drain (Id) @ 25°C : -
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : -
Supplier Device Package : -
Package / Case : -

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