SISC050N10DX1SA1 Pricing (USD) [332673pcs Stock]
- 1 pcs$0.11118
- Part Number:
- SISC050N10DX1SA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CHAN SAWED WAFER.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Power Driver Modules and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies SISC050N10DX1SA1 electronic components. SISC050N10DX1SA1 can be shipped within 24 hours after order. If you have any demands for SISC050N10DX1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISC050N10DX1SA1 Product Attributes
Part Number :
SISC050N10DX1SA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CHAN SAWED WAFER
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
-
Current - Continuous Drain (Id) @ 25°C :
-
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
FET Feature :
-
Power Dissipation (Max) :
-
Operating Temperature :
-
Mounting Type :
-
Supplier Device Package :
-
Package / Case :
-
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