Infineon Technologies - IPW65R150CFDFKSA1

KEY Part #: K6399974

IPW65R150CFDFKSA1 Pricing (USD) [18969pcs Stock]

  • 1 pcs$2.17265
  • 240 pcs$1.37320

Part Number:
IPW65R150CFDFKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V TO247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW65R150CFDFKSA1 Product Attributes

Part Number : IPW65R150CFDFKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V TO247
Series : CoolMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2340pF @ 100V
FET Feature : -
Power Dissipation (Max) : 195.3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO247-3
Package / Case : TO-247-3

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