RCX081N20 Pricing (USD) [101653pcs Stock]
- 1 pcs$0.42646
- 10 pcs$0.37629
- 100 pcs$0.28140
- 500 pcs$0.21822
- 1,000 pcs$0.17228
- Part Number:
- RCX081N20
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 200V 8A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RCX081N20 electronic components. RCX081N20 can be shipped within 24 hours after order. If you have any demands for RCX081N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RCX081N20 Product Attributes
Part Number :
RCX081N20
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 200V 8A TO220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
770 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.23W (Ta), 40W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220FM
Package / Case :
TO-220-3 Full Pack
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