Vishay Semiconductor Diodes Division - VS-4EWH02FNTR-M3

KEY Part #: K6452781

VS-4EWH02FNTR-M3 Pricing (USD) [269707pcs Stock]

  • 1 pcs$0.13714
  • 2,000 pcs$0.12429
  • 6,000 pcs$0.11571
  • 10,000 pcs$0.11428

Part Number:
VS-4EWH02FNTR-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 4A D-PAK. Rectifiers Hyperfast 4A 200V 23ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Thyristors - SCRs, Transistors - IGBTs - Modules, Thyristors - TRIACs and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-4EWH02FNTR-M3 electronic components. VS-4EWH02FNTR-M3 can be shipped within 24 hours after order. If you have any demands for VS-4EWH02FNTR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-4EWH02FNTR-M3 Product Attributes

Part Number : VS-4EWH02FNTR-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 4A D-PAK
Series : Automotive, AEC-Q101, FRED Pt®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 4A
Voltage - Forward (Vf) (Max) @ If : 950mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 20ns
Current - Reverse Leakage @ Vr : 3µA @ 200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : D-PAK (TO-252AA)
Operating Temperature - Junction : -65°C ~ 175°C

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