Infineon Technologies - IRL100HS121

KEY Part #: K6407509

IRL100HS121 Pricing (USD) [201485pcs Stock]

  • 1 pcs$0.18358

Part Number:
IRL100HS121
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 6PQFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Zener - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IRL100HS121 electronic components. IRL100HS121 can be shipped within 24 hours after order. If you have any demands for IRL100HS121, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRL100HS121 Product Attributes

Part Number : IRL100HS121
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 6PQFN
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 42 mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id : 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs : 5.6nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 50V
FET Feature : -
Power Dissipation (Max) : 11.5W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-PQFN (2x2)
Package / Case : 6-VDFN Exposed Pad

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