FDB86102LZ Pricing (USD) [111339pcs Stock]
- 1 pcs$0.33220
- 800 pcs$0.23110
- Part Number:
- FDB86102LZ
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 30A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - RF, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - Rectifiers - Arrays and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDB86102LZ electronic components. FDB86102LZ can be shipped within 24 hours after order. If you have any demands for FDB86102LZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB86102LZ Product Attributes
Part Number :
FDB86102LZ
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 30A D2PAK
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
24 mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1275pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
3.1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263AB
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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