ON Semiconductor - NTMS4177PR2G

KEY Part #: K6415730

NTMS4177PR2G Pricing (USD) [308600pcs Stock]

  • 1 pcs$0.12046
  • 2,500 pcs$0.11986

Part Number:
NTMS4177PR2G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 30V 6.6A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in ON Semiconductor NTMS4177PR2G electronic components. NTMS4177PR2G can be shipped within 24 hours after order. If you have any demands for NTMS4177PR2G, Please submit a Request for Quotation here or send us an email:
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NTMS4177PR2G Product Attributes

Part Number : NTMS4177PR2G
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 30V 6.6A 8-SOIC
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3100pF @ 24V
FET Feature : -
Power Dissipation (Max) : 840mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOIC
Package / Case : 8-SOIC (0.154", 3.90mm Width)