[3757pcs Stock]
- Part Number:
- D650N08TXPSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 800V 650A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies D650N08TXPSA1 electronic components. D650N08TXPSA1 can be shipped within 24 hours after order. If you have any demands for D650N08TXPSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
D650N08TXPSA1 Product Attributes
Part Number :
D650N08TXPSA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 800V 650A
Series :
-
Part Status :
Obsolete
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
800V
Current - Average Rectified (Io) :
650A
Voltage - Forward (Vf) (Max) @ If :
950mV @ 450A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
20mA @ 800V
Capacitance @ Vr, F :
-
Mounting Type :
Chassis Mount
Package / Case :
DO-200AA, A-PUK
Supplier Device Package :
-
Operating Temperature - Junction :
-40°C ~ 180°C
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