DMT6009LCT Pricing (USD) [92595pcs Stock]
- 1 pcs$0.40138
- 50 pcs$0.30454
- 100 pcs$0.26649
- 500 pcs$0.20665
- 1,000 pcs$0.16314
- Part Number:
- DMT6009LCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CHA 60V 37.2A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT6009LCT electronic components. DMT6009LCT can be shipped within 24 hours after order. If you have any demands for DMT6009LCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6009LCT Product Attributes
Part Number :
DMT6009LCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CHA 60V 37.2A TO220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33.5nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1925pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.2W (Ta), 25W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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