DMN63D8LDW-13 Pricing (USD) [2016851pcs Stock]
- 1 pcs$0.01834
- 10,000 pcs$0.01657
- Part Number:
- DMN63D8LDW-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET 2N-CH 30V 0.22A SOT363.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMN63D8LDW-13 electronic components. DMN63D8LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN63D8LDW-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN63D8LDW-13 Product Attributes
Part Number :
DMN63D8LDW-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET 2N-CH 30V 0.22A SOT363
Series :
-
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
220mA
Rds On (Max) @ Id, Vgs :
2.8 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
870nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
22pF @ 25V
Power - Max :
300mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
Supplier Device Package :
SOT-363
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